Voltage-margin limiting mechanisms of AlScN-based HEMTs

Power Limiting Mechanisms in InP HEMTs

The InAlAs/InGaAs High Electron Mobility Transistor (HEMT) fabricated on InP has proven to be the fastest transistor ever produced. It also appears to be the best candidate for power amplification at mm-wave frequencies. To date, however, very good highfrequency power performance has not been realized in these devices, and the lack of a clear understanding of the power-limiting mechanisms has h...

Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs

Acknowledgments 1 Acknowledgments I would like to acknowledge prof. Labat, prof. Nathalie Malbert and prof. André Touboul for their guidance, support, and the freedom to explore my own ideas; Alessandro Chini, prof. Gaudenzio Meneghesso, prof Enrico Zanoni and all the members of their group, as well as the members of the NNL laboratory, for the great cooperative work in Italy; Mohsine Bouya, Ar...

Breakdown behaviour of high-voltage GaN-HEMTs

Degradation Mechanisms of GaN HFETs: Comparison With GaAs Based HEMTs

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems to be the most promising. While GaN device and circuit technology is poised to break out in the commercial arena...

Voltage Security Margin Assessment